Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT100N04D3

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

MOSFET N-CH 40V 13A DFN3*3-8L Product overview: GT100N04D3 from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-GT100N04D3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1376884-GT100N04D3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 30 pct.
Mfr: Goford Semiconductor
Product Status: Active
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (3.15x3.05)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
Power Dissipation (Max): 23W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0000
REACH Status: REACH Unaffected
ECCN: EAR99

N/P Channel: N-CH
Voltage(VDS): 40V
Current(ID): 13A
RDS(on): RD(max)<10mΩ@10V
VTH: VTH1.0V~2.5V
Package: DFN3x3-8L