Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GT025N06AQ

The GT025N06AQ is an N-channel enhancement mode MOSFET Designed for power switching, DC/DC conversion, and synchronous rectification. It is packaged in a TO-247 case and rated for a maximum drain-source voltage of 60V and a continuous drain current of 175A at 25°C. The drain-source on-resistance is less than 2.5mΩ at VGS = 10V and less than 3.2mΩ at VGS = 4.5V. The device is 100% avalanche tested with a single pulse avalanche energy rating of 420mJ and dissipates up to 220W. Its operating junction and storage temperature range is -55°C to 150°C, with a thermal resistance from junction to case of 0.57°C/W. The part is RoHS compliant.