Goford Semiconductor Co., Ltd. Single FETs, MOSFETs GC190N65FF

The GC190N65FF is an N-channel enhancement mode Power MOSFET designed for AC-DC SMPS applications including PFC and industrial power conversion. It is packaged in a TO-220F case and rated for a drain-source voltage of 650 V and a continuous drain current of 19 A at 25°C. The device has a maximum on-resistance of 190 mΩ at Vgs = 10 V, a power dissipation of 35 W, and a thermal resistance from junction-to-case of 3.6 °C/W. It is 100% avalanche tested with a single pulse avalanche energy of 14 mJ and features an ultra-fast body diode. The part is RoHS compliant and operates within a junction and storage temperature range of -55 to 150 °C.