N/P Channel: N-CH
Voltage(VDS): 20V
Current(ID): 30A
RDS(on): RD(max)<13mΩ@4.5V
VTH: VTH0.5V~1.2V
Package: TO-220
MOSFET N-CH 20V 30A TO-220 Product overview: G30N02T from Goford Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 30A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 30A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-G30N02T can be used for catalog matching and distributor lookup.
N20V,RD(MAX)<13M@4.5
MOSFET N-CH 20V 30A TO-220
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | 278-G30N02T | G30N02T | 3141-G30N02T-ND | |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G30N02T | 20V 30A TO-220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs |
| Package Type | TO-220; SOT3 | Tube | TO-220; TO-220-3 | TO-220; TO-220-3 |
| PD | 40000 milliwatts | 40000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Packing Method | Tube |
