P30V,RD(MAX)<59M@-10
Win Source Part Number: 1376820-G3035L
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Power Dissipation (Max): 1.4W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
N/P Channel: P-CH
Voltage(VDS): -30V
Current(ID): -4.1A
RDS(on): RD(max)<59mΩ@-10V
VTH: VTH-1.0V~-2.5V
Package: SOT-23-3L
P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
P30V,RD(MAX)<59M@-10
30V 4.1A 1.4W 48mΩ 2V@250uA P Channel SOT-23 MOSFETs ROHS
P30V,RD(MAX)<59M@-10
P30V,RD(MAX)<59M@-10
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-G3035L | 1376820-G3035L | 3141-G3035LTR-ND | G3035L | G3035L | G3035L | |
| Product Name | -10V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - G3035L | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1400 milliwatts | 1400 milliwatts | 1400 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | Tape & Reel (TR) | SOT3; SOT23 | SOT3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel |
