Goford Semiconductor Co., Ltd. Single FETs, MOSFETs G3035L

Description
P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
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Description
P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 3141-G3035LTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G3035LTR-ND
Single FETs, MOSFETs 3141-G3035LTR-ND
P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

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Single FETs, MOSFETs - 3141-G3035LCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G3035LCT-ND
Single FETs, MOSFETs 3141-G3035LCT-ND
P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

P-Channel 30V 4.1A (Ta) 1.4W (Ta) Surface Mount SOT-23-3

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Single FETs, MOSFETs - 3141-G3035LDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3141-G3035LDKR-ND
Single FETs, MOSFETs 3141-G3035LDKR-ND
P30V,RD(MAX)<59M@-10 V,RD(MAX)<75

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Buy Now Datasheet
Singapore
-10V MOSFET Transistor
278-G3035L
-10V MOSFET Transistor 278-G3035L
P30V,RD(MAX)<59M@-10 V,RD(MAX)<75>

P30V,RD(MAX)<59M@-10V,RD(MAX)<75>

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1376820-G3035L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1376820-G3035L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1376820-G3035L
Win Source Part Number: 1376820-G3035L Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 49 pct. MSL Level: 3 (168 Hours) Mfr: Goford Semiconductor Package: Tape & Reel Product Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V Power Dissipation (Max): 1.4W (Ta) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1376820-G3035L
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 3 (168 Hours)
Mfr: Goford Semiconductor
Package: Tape & Reel
Product Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Power Dissipation (Max): 1.4W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G3035L -  - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G3035L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - G3035L
N/P Channel: P-CH Voltage(VDS): -30V Current(ID): -4.1A RDS(on): RD(max)<59mΩ@-10V VTH: VTH-1.0V~-2.5V Package: SOT-23-3L

N/P Channel: P-CH
Voltage(VDS): -30V
Current(ID): -4.1A
RDS(on): RD(max)<59mΩ@-10V
VTH: VTH-1.0V~-2.5V
Package: SOT-23-3L

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Single FETs, MOSFETs - G3035L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
G3035L
Single FETs, MOSFETs G3035L
P30V,RD(MAX)<59M@-10 V,RD(MAX)<75

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - G3035L - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
G3035L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs G3035L
P30V,RD(MAX)<59M@-10 V,RD(MAX)<75

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
G3035L
Triode/MOS Tube/Transistor >> MOSFETs G3035L
30V 4.1A 1.4W 48mΩ 2V@250uA P Channel SOT-23 MOSFETs ROHS

30V 4.1A 1.4W 48mΩ 2V@250uA P Channel SOT-23 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Win Source Electronics ODG (Origin Data Global) Acme Chip Technology Co., Limited LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 3141-G3035LTR-ND 278-G3035L 1376820-G3035L G3035L G3035L G3035L
Product Name Single FETs, MOSFETs -10V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - G3035L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel P-Channel P-Channel; P-Channel P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) SOT3; SOT23 SOT3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23
PD 1400 milliwatts 1400 milliwatts 1400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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