Goford Semiconductor Co., Ltd. Transistors 630A-252

Description
200V 9A 83W 250mΩ@10V,4.5A 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS
Description
200V 9A 83W 250mΩ@10V,4.5A 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 630A-252 - ODG (Origin Data Global)
Shenzhen, China
Transistors
630A-252
Transistors 630A-252
200V 9A 83W 250mΩ@10V,4.5A 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS

200V 9A 83W 250mΩ@10V,4.5A 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 630A-252
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric - 54W0214 - Newark, An Avnet Company
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
60 V, 320 mA dual N-channel Trench MOSFET - 2N7002PS,125 - Nexperia B.V.
Specs
Transistor Type MOSFET
Package Type SOT363-3 SOT363-3
View Details
3 suppliers
 - 2ED2742S01GXTMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Transistor Type MOSFET
Package Type PG-VSON-1
View Details
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details