Manufacturer: GeneSiC Semiconductor
Category: Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Series: G3R™
Package: Tube
Product Status: Active
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
SIC MOSFET, N-CH, 1.2KV, 90A, 400W; MOSFET Module Configuration:Single
SIC MOSFET N-CH 90A TO247-4
| Win Source Electronics | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 89AH0985 | G3R30MT12K | |
| Product Name | Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs | Sic Mosfet, N-Ch, 1.2Kv, 90A, 400W; Mosfet Module Configuration Genesic Semiconductor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
