GaN Systems Inc. Transistors GS66508T-MR

The GS66508T-MR is a top-side cooled 650 V enhancement mode GaN transistor in a GaNPX® package with a 7.0 x 4.5 mm² PCB footprint. It has a drain-source on-resistance of 50 mΩ at 25 °C and a continuous drain current rating of 30 A at 25 °C case temperature. The device supports a transient gate-source voltage of −20 V to +10 V and operates with a 0 V to 6 V gate drive. Thermal resistance from junction to case is 0.5 °C/W. It exhibits zero reverse recovery charge, supports reverse current conduction, and operates with junction temperatures between −55 °C and +150 °C. The package is RoHS 3 (6+4) compliant and supplied on a 7" (180 mm) mini-reel with a 250-unit quantity. The part meets AEC-Q200 and IEC 60286-3 standards.