GaN Systems Inc. MOSFET GS66506T-E01-MR

The GS66506T-E01-MR is a top-side cooled 650 V enhancement mode GaN transistor in a GaNPX® package with a 5.6 x 4.5 mm² PCB footprint. It has a drain-to-source on-resistance of 67 mΩ at 25 °C and a continuous drain current rating of 22.5 A at 25 °C case temperature. The device features zero reverse recovery loss, operates with a 0 V to 6 V gate drive, and supports transient gate voltages up to ±20 V for pulses under 1 µs. It achieves a junction-to-case thermal resistance of 0.7 °C/W and is RoHS 6 compliant. The part is supplied on a mini-reel for 250 units.