Fuji Electric Corp. of America TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3529-01 2SK3529-01

Description
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037776-2SK3529-01 Length: 9.9822 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 800 V Forward Voltage: 900 mV Power Dissipation: 195 W Height: 15.0114 mm Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220AB Alternative Parts (Cross-Reference): FQP6N80C; FQP7N80C; FQP8N80C; IRFB9N65APBF; IRFB9N60APBF; IRFBC40APBF; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 21 ns Drain to Source Breakdown Voltage: 800 V Turn-Off Delay Time: 40 ns Drain to Source Resistance: 1.9 Ω Gate to Source Voltage (Vgs): 30 V
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3529-01 - 1037776-2SK3529-01 - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- - 70212470 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote
Description
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037776-2SK3529-01 Length: 9.9822 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 800 V Forward Voltage: 900 mV Power Dissipation: 195 W Height: 15.0114 mm Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220AB Alternative Parts (Cross-Reference): FQP6N80C; FQP7N80C; FQP8N80C; IRFB9N65APBF; IRFB9N60APBF; IRFBC40APBF; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 21 ns Drain to Source Breakdown Voltage: 800 V Turn-Off Delay Time: 40 ns Drain to Source Resistance: 1.9 Ω Gate to Source Voltage (Vgs): 30 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3529-01 - 1037776-2SK3529-01 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3529-01
1037776-2SK3529-01
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3529-01 1037776-2SK3529-01
Manufacturer: Fuji Electric Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037776-2SK3529-01 Length: 9.9822 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 800 V Forward Voltage: 900 mV Power Dissipation: 195 W Height: 15.0114 mm Number of Pins: 3 Width: 4.4958 mm Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220AB Alternative Parts (Cross-Reference): FQP6N80C; FQP7N80C; FQP8N80C; IRFB9N65APBF; IRFB9N60APBF; IRFBC40APBF; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Turn-On Delay Time: 21 ns Drain to Source Breakdown Voltage: 800 V Turn-Off Delay Time: 40 ns Drain to Source Resistance: 1.9 Ω Gate to Source Voltage (Vgs): 30 V

Manufacturer: Fuji Electric
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1037776-2SK3529-01
Length: 9.9822 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 800 V
Forward Voltage: 900 mV
Power Dissipation: 195 W
Height: 15.0114 mm
Number of Pins: 3
Width: 4.4958 mm
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-220AB
Alternative Parts (Cross-Reference): FQP6N80C; FQP7N80C; FQP8N80C; IRFB9N65APBF; IRFB9N60APBF; IRFBC40APBF;
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Turn-On Delay Time: 21 ns
Drain to Source Breakdown Voltage: 800 V
Turn-Off Delay Time: 40 ns
Drain to Source Resistance: 1.9 Ω
Gate to Source Voltage (Vgs): 30 V

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 7A 800V 1.9ohm MOSFET Transistor
285-2SK3529-01
N-Channel 7A 800V 1.9ohm MOSFET Transistor 285-2SK3529-01
Power Field-Effect Transistor, 7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Product overview: 2SK3529-01 from Fuji Electric is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 800V, 1.9ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 800V, 1.9ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3529-01 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Product overview: 2SK3529-01 from Fuji Electric is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 800V, 1.9ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 800V, 1.9ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3529-01 can be used for catalog matching and distributor lookup.

Supplier's Site
MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- - 70212470 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/-
70212470
MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/- 70212470
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1037776-2SK3529-01 285-2SK3529-01 70212470
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3529-01 N-Channel 7A 800V 1.9ohm MOSFET Transistor MOSFET, Power;N-Ch;VDSS 800V;RDS(ON) 1.46 Ohms;ID +/-7A;TO-220AB;PD 195W;VGS +/-
V(BR)DSS 800 volts 800 volts
rDS(on) 1.9 ohms 1.46 ohms
PD 195000 milliwatts 195000 milliwatts
TJ -55 C (-67 F)
Unlock Full Specs
to access all available technical data