First Sensor AG Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,1064 nm, Series 10 3001426

Description
These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
Datasheet
Description
These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
Datasheet

Suppliers

Company
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Description
Supplier Links
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,1064 nm, Series 10 - 3001426 - First Sensor AG
Berlin, Germany
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,1064 nm, Series 10
3001426
Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,1064 nm, Series 10 3001426
These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths

These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources.

Features:

  • High quantum yield at 1064 nm
  • High sensitivity
  • Low noise
  • High speed
  • Optimized for longer wavelengths
Supplier's Site Datasheet
Sheung Wan, Hong Kong
Photodiodes
3001426
Photodiodes 3001426
Photodiodes AD4000-10 TO (TO8Si)

Photodiodes AD4000-10 TO (TO8Si)

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Technical Specifications

  First Sensor AG VAST STOCK CO., LIMITED
Product Category Photodiodes Photodiodes
Product Number 3001426 3001426
Product Name Avalanche Photodiodes (APD) with Enhanced NIR Sensitivity,1064 nm, Series 10 Photodiodes
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 850 to 1064 nm (8500 to 10640 Å)
Photodiode Material Silicon
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