EVVO Semi Single Bipolar Transistors NJW0281G

NJW0281G is a silicon NPN transistor designed for power amplifier applications, particularly in 100-W high-fidelity audio output stages. It is housed in a TO-3P package and has a collector-emitter voltage rating of 230 V, a collector current rating of 15 A, and a collector power dissipation of 150 W at Tc=25℃. The junction-to-case thermal resistance is 0.35 ℃/W. Electrical characteristics include a DC current gain (hFE) of 80 to 160 at IC=1A and 35 at IC=7A, a collector-emitter saturation voltage of 3.0 V at IC=8A and IB=0.8A, and a transition frequency of 30 MHz. The device is rated for a junction temperature up to 150℃ and a storage temperature range of -55℃ to 150℃.