EVVO Semi Single Bipolar Transistors 2SC5196

The 2SC5196 is an NPN silicon bipolar epitaxial planar power transistor paired with the 2SA1939 PNP device for high-fidelity audio amplifier output stages. It is packaged in a TO-3PS case and rated for a continuous collector current of 6 A and a collector-emitter voltage of 80 V. The collector power dissipation is 60 W at Tc=25°C, with a junction temperature limit of 150°C. The device exhibits a transition frequency greater than 30 MHz and a collector-emitter saturation voltage of up to 2.0 V at Ic=5 A and Ib=-0.5 A. The DC current gain ranges from 35 to 160 under varying test conditions. Storage temperature ranges from -55°C to 150°C.