Everlight USA, Inc. Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators ELD213(TB)

Description
OPTOISO 3.75KV 2CH TRANS 8-SOP
  • Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators - ELD213(TB) - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
OPTOISO 3.75KV 2CH TRANS 8-SOP

Suppliers

Company
Product
Description
Supplier Links
Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators - ELD213(TB) - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators
ELD213(TB)
Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators ELD213(TB)
OPTOISO 3.75KV 2CH TRANS 8-SOP

OPTOISO 3.75KV 2CH TRANS 8-SOP

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number ELD213(TB)
Product Name Isolators - Optoisolators - Transistor, Photovoltaic Output Optoisolators
Packing Method Tape Reel; Surface Mount
Unlock Full Specs
to access all available technical data

Similar Products

100V 35A DPAK MOSFET Transistor - 278-AUIRFR540Z - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
100V 35A DPAK MOSFET Transistor
AUIRFR540Z
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
PD 91000 milliwatts
View Details
8 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1405E - 855034-2SA1405E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1405E
2SA1405E
Specs
Package Type SOT3
View Details
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Qorvo
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
QPD0060
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
Power Gain 25 dB
View Details