The MRF587 is an NPN silicon RF power transistor designed for high linearity power amplifier applications up to 500 MHz. It is packaged in a .280 4NL stud mount configuration. The device has a collector-base voltage rating of 34 V, collector-emitter voltage of 17 V, and collector current of 200 mA. Power dissipation is 5.0 W at 25 °C, with junction temperature operating from -65 °C to +200 °C and storage temperature from -65 °C to +150 °C. Typical power gain is 16 dB at 220 W and 500 MHz, with collector efficiency of 65% at 15 V, 90 mA, and 300 MHz. Diffused ballast resistors and an Omnigold™ metalization system are integrated for stability and performance.
RF Bipolar Transistors RF Transistor Product overview: MRF587 from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF587 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF587 |
| Product Name | Bipolar Transistor |
| Polarity | NPN |
| Package Type | Tray |
| Packing Method | Tray |
