The MRF555T is an NPN silicon RF transistor designed for wideband large-signal amplification in the UHF frequency range, available in tape and reel packaging. It features a maximum collector current of 500 mA, collector-emitter voltage of 30 V, and power dissipation of 3.0 W at 75 °C. The device operates with a typical power gain of 11 dB at 470 MHz and 12.5 V, providing 60% collector efficiency. Junction temperature ranges from -65 °C to +200 °C, and storage temperature from -65 °C to +150 °C. The thermal resistance from junction to case is 41.7 °C/W. The package is a 4-pin configuration with emitter pins at terminals 2 and 4.
RF Bipolar Transistors RF Transistor Product overview: MRF555T from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF555T can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF555T |
| Product Name | Bipolar Transistor |
| Polarity | NPN |
| Package Type | Tray |
| Packing Method | Tray |
