EPC Space Single FETs, MOSFETs JANSH2N7675UFBC

JANSH2N7675UFBC is a radiation-hardened enhancement-mode gallium nitride FET for space and harsh environments, with a drain-source voltage of 40 V, a maximum gate-source voltage of +6 V, −4 V, a drain current of 50 A, and a power dissipation of 56 W in an FSMD-B package. It is rated for total ionizing dose up to 1000 kRad, single event effects immunity at 84 MeV·mg/cm², and neutron tolerance up to 1 × 10¹⁵ neutrons/cm². The device maintains performance under low dose rate conditions and retains pre-radiation specifications.