EPC Space Single FETs, MOSFETs EPC7001BSH

The EPC7001BSH is a radiation-hardened, 40 V, 50 A enhancement-mode gallium nitride (eGaN®) HEMT designed for satellite and deep space applications. It features a compact hermetic FSMD-B surface-mount package measuring 5.59 mm by 3.81 mm with a weight of 0.135 g. The device has a maximum drain-to-source resistance of 11 mΩ at 25°C, a gate-source threshold voltage range of 0.8 to 2.5 V, and total ionizing dose immunity up to 1 Mrad with Single Event Effect (SEE) hardness up to 83.2 MeV·cm²/mg. Thermal resistance from junction to case is 2.25 °C/W. The part meets MIL-STD-750 radiation testing standards and is ESD Class 1B. Source sense pin enables accurate current sensing.