Emhiser Research, Inc. RF High Power Amplifiers EP-S3DE

Description
In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier needs of our present and future customers. Custom amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT. Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.
Datasheet
Description
In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier needs of our present and future customers. Custom amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT. Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF High Power Amplifiers - EP-S3DE - Emhiser Research, Inc.
Verdi, NV, USA
RF High Power Amplifiers
EP-S3DE
RF High Power Amplifiers EP-S3DE
In addition to Emhiser Research, Inc.'s line of miniature RF power amplifiers, Emhiser's acquisition of the military RF power amplifier product line from the former Chesapeake Microwave Corporation allows us to better serve the RF amplifier needs of our present and future customers. Custom amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT. Emhiser's custom RF high power amplifiers are designed to customer's specifications and / or source control drawings. Listed below are a few of our present products. Please call us to discuss your requirements.

In addition to Emhiser Research, Inc.'s line of miniature RF power
amplifiers, Emhiser's acquisition of the military RF power amplifier product
line from the former Chesapeake Microwave Corporation allows us to better
serve the RF amplifier needs of our present and future customers.
Custom amplifiers may be designed in a wide variety of rack-mounted and
airborne packages, power levels, gains, frequency bands, supply voltage
requirements, communications, and control. Transistor technologies utilized
include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT.
Emhiser's custom RF high power amplifiers are designed to customer's
specifications and / or source control drawings. Listed below are a few of
our present products. Please call us to discuss your requirements.

Supplier's Site Datasheet

Technical Specifications

  Emhiser Research, Inc.
Product Category RF Amplifiers
Product Number EP-S3DE
Product Name RF High Power Amplifiers
Amplifier Type Power Amplifier
Operating Temperature -20 to 70 C (-4 to 158 F)
Frequency Range 1435 to 2400 MHz
Minimum Gain 1.5 dB
Maximum Gain 1.5 dB
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