Efficient Power Conversion Corporation FET, MOSFET Arrays EPC2100ENGRT

The EPC2100 is a monolithic enhancement-mode gallium nitride (GaN) power transistor in half-bridge configuration, supplied as a passivated die with solder bumps for surface mount application. The package dimensions are 6.05 mm × 2.3 mm. The high-side FET (Q1) has a drain-to-source voltage rating of 30 V, continuous drain current of 10 A, and on-resistance of 8.2 mΩ; the low-side FET (Q2) has a continuous drain current of 40 A and on-resistance of 2.1 mΩ. Both devices operate from −40°C to 150°C with junction-to-case thermal resistance of 0.4°C/W. Gate drivers support ±4 V to 6 V gate-source voltage. The device exhibits zero reverse recovery charge and low gate charge, enabling high-frequency operation in DC-DC and point-of-load converters.