Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2030ENGRT

The EPC2030 is an enhancement mode gallium nitride (eGaN®) FET for high-frequency power conversion applications, supplied as a passivated die with solder bumps measuring 4.6 mm x 2.6 mm. It has a 40 V drain-to-source voltage rating and a continuous drain current of 48 A at 25°C. Its on-resistance is 1.8 to 2.4 mΩ at V_GS = 5 V and I_D = 30 A. The gate threshold voltage is 0.8 to 2.5 V. Thermal resistance is 0.45 °C/W from junction to case and 3.9 °C/W from junction to board. The device operates from -40°C to 150°C junction temperature. The substrate is connected to the source. It meets MSL 1 moisture sensitivity level per IPC/JEDEC standards.