Efficient Power Conversion Corporation Single FETs, MOSFETs EPC2001

The EPC2001 is an enhancement mode gallium nitride (GaN) power FET designed for high-efficiency, high-frequency switching applications. It is supplied in a passivated die form with solder bars, featuring a 11-solder bar surface mount package. The device has a continuous drain-to-source voltage rating of 100 V and a maximum continuous drain current of 25 A at 25°C. The typical drain-source on-resistance is 7 mΩ at 5 V gate-source voltage and 25 A drain current. It operates over a junction temperature range of -40°C to 125°C, with a thermal resistance from junction to case of 2.1°C/W and junction to ambient of 54°C/W when mounted on a 1 in² copper pad. The gate-source voltage rating is ±6 V, and the device exhibits ultra-low gate charge and zero reverse recovery charge due to its lateral structure and majority carrier diode. The part meets MSL1 moisture sensitivity level per IPC/JEDEC standards.