DOWOSEMI Technology Co., Ltd. Transistors SS8050 200-350

Description
25V 300mW 120@100mA,1V 1.5A NPN SOT-23 Bipolar (BJT) ROHS
  • Transistors - SS8050 200-350 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
25V 300mW 120@100mA,1V 1.5A NPN SOT-23 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - SS8050 200-350 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
SS8050 200-350
Transistors SS8050 200-350
25V 300mW 120@100mA,1V 1.5A NPN SOT-23 Bipolar (BJT) ROHS

25V 300mW 120@100mA,1V 1.5A NPN SOT-23 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number SS8050 200-350
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS209
View Details
DC - 6 GHz, 10 Watt, 32 V GaN RF Power Transistor - T1G6001032-SM - Qorvo
Qorvo
DC - 6 GHz, 10 Watt, 32 V GaN RF Power Transistor
T1G6001032-SM
Specs
Transistor Technology / Material GaN
Package Type QFN
View Details
590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
590A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E590
Specs
Transistor Type IGBT
View Details
IGBT - 119566400 - Radwell International
Fuji Electric Corp. of America
IGBT
7MBR20SA060-70
Specs
Transistor Type IGBT
View Details