Dongguan Pingjing Microelectronics Technology Co., Ltd. Transistors PJMG10H08NTE

Description
100V 8A 86mΩ@10V,3A 32W 1.6V@250uA 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - PJMG10H08NTE - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
100V 8A 86mΩ@10V,3A 32W 1.6V@250uA 1 N-Channel TO-252 MOSFETs ROHS
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Transistors - PJMG10H08NTE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
PJMG10H08NTE
Transistors PJMG10H08NTE
100V 8A 86mΩ@10V,3A 32W 1.6V@250uA 1 N-Channel TO-252 MOSFETs ROHS

100V 8A 86mΩ@10V,3A 32W 1.6V@250uA 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number PJMG10H08NTE
Product Name Transistors
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