Dongguan Pingjing Microelectronics Technology Co., Ltd. Transistors PJM60N20TE

Description
20V 60A 37W 6mΩ@4.5V,25A 1V@250uA 1 N-Channel TO-252 MOSFETs ROHS
Description
20V 60A 37W 6mΩ@4.5V,25A 1V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - PJM60N20TE - ODG (Origin Data Global)
Shenzhen, China
Transistors
PJM60N20TE
Transistors PJM60N20TE
20V 60A 37W 6mΩ@4.5V,25A 1V@250uA 1 N-Channel TO-252 MOSFETs ROHS

20V 60A 37W 6mΩ@4.5V,25A 1V@250uA 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number PJM60N20TE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

650A Igbt Module For One Phase 400/480V - SK-H1-QOUT-D650 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Transistor - 32764010 - Radwell International
Fuji Electric Corp. of America
View Details
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW50N65DF5 - AIKW50N65DF5 - Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-247; PG-TO247-3
Transistor Grade / Operating Range Automotive
View Details