P-channel enhancement mode MOSFET for signal processing and logic level conversion, housed in an SOT-23 (TO-236) package with a maximum drain-source voltage of 30 V, continuous drain current of 230 mA, and power dissipation of 420 mW on a 1 cm² copper pad. The device features an on-state resistance of less than 4.1 Ω at 4.5 V gate voltage, a gate threshold voltage range of 0.6 to 1.6 V, and ESD-protected gate. It operates from -55°C to 150°C junction temperature, complies with AEC-Q101 for the -Q suffix variant, meets RoHS, and has a UL 94 V-0 case material. Includes SPICE model and STEP file.
MOSFET P-CH 30V 230MA SOT23-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 4878-MMFTP3008AKTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |