Diotec Semiconductor Single FETs, MOSFETs DIW170SIC049

The DIW170SIC049 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in DC/DC converters, power supplies, and inverters. It is packaged in a TO-247 case with a maximum drain-source voltage of 1700 V, a continuous drain current of 67 A at 25°C, and a drain-source on-state resistance of less than 49 mΩ. The device has a power dissipation of 357 W, a gate-source voltage range of -8 V to 22 V, and operates with a junction temperature range of -55°C to 175°C. It is 100% avalanche tested, features low gate charge and fast switching times, and meets AEC-Q101 standards for automotive applications. The package is rated UL 94 V-0 and complies with RoHS and REACH requirements.