Diotec Semiconductor Single FETs, MOSFETs DIW120SIC028

The DIW120SIC028 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as DC/DC converters, power supplies, and charging stations. It is packaged in a TO-247-3L case and has a drain-source voltage rating of 1200 V, a continuous drain current of 100 A at 25°C, and a maximum power dissipation of 517 W. The on-state resistance is less than 27.4 mΩ at 25°C, with a junction temperature range of -55°C to 175°C. The device is 100% avalanche tested, features low gate charge and fast switching, and complies with AEC-Q101 for automotive applications. It is RoHS compliant and meets UL 94 V-0 for flame resistance, with a thermal resistance from junction to case of 0.29 K/W.