Diotec Semiconductor Single FETs, MOSFETs DIW065SIC080

The DIW065SIC080 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as DC/DC converters, power supplies, and inverters. It is packaged in a TO-247 case with a maximum junction temperature of 175°C, a drain-source voltage rating of 650 V, and a continuous drain current of 36 A at 25°C. The device features a drain-source on-state resistance of up to 80 mΩ at 25°C and 75 mΩ at 175°C, with a total gate charge of 75 nC. It is 100% avalanche tested and rated for unclamped inductive switching. The part complies with RoHS, REACH, and AEC-Q101 standards. Thermal resistance from junction to case is 0.21 K/W. The case material meets UL 94 V-0 flammability rating, and soldering conditions are specified at 260°C for 10 seconds.