Diotec Semiconductor Single FETs, MOSFETs DIJ006N90

N-channel power MOSFET in ITO-220 package with a drain-source voltage rating of 900 V, continuous drain current of 6 A at 25°C, and on-state resistance below 2.1 Ω. It supports peak drain current of 16 A, has an avalanche energy rating of 310 mJ, and a maximum junction temperature of 175°C. The device features an isolated heat flange, ESD-protected gate, and is AEC-Q101 compliant with suffix -Q. Thermal resistance junction-to-case is less than 4 K/W. Package is rated UL 94 V-0 and compliant with RoHS and REACH.