Diotec Semiconductor Single FETs, MOSFETs DIF120SIC053

The DIF120SIC053 is a silicon carbide (SiC) MOSFET designed for high-efficiency power conversion in applications such as EV charging stations, solar inverters, and industrial power supplies. It is packaged in a TO-247-4L case with a maximum drain-source voltage of 1200 V and a continuous drain current of 68 A at 25°C. The device features a maximum on-state resistance of 53 mΩ at 25°C, a junction temperature range of -55°C to 175°C, and a power dissipation of 278 W. It includes a Kelvin source for reduced gate noise and fast switching, with a gate threshold voltage ranging from 1.9 V to 4 V. The part meets RoHS, REACH, and AEC-Q101 compliance standards, and its case material is UL 94 V-0 rated. Thermal resistance from junction to case is 0.44 K/W.