Diotec Semiconductor FET, MOSFET Arrays DI8A6C03SQ

DI8A6C03SQ is a dual complementary N- and P-channel power MOSFET in a SO-8 package, designed for load switching and polarity protection in battery-powered and industrial applications. The device features a maximum drain-source voltage of ±30 V, continuous drain currents of 8.6 A and -7.3 A, and on-state resistances of less than 17 mΩ and 20.5 mΩ for the N- and P-channel devices respectively. It has a low profile, low gate charge, and fast switching times, with a maximum power dissipation of 1.6 W and junction temperature range of -55°C to +150°C. The package is taped and reeled, weighs approximately 0.1 g, and meets UL 94 V-0 flammability standards. It is AEC-Q101 compliant and RoHS compliant.