Diotec Semiconductor Single FETs, MOSFETs DI170N03PQ

The DI170N03PQ is an N-channel power MOSFET designed for high-current switching applications such as DC/DC converters, power supplies, and synchronous rectifiers. It is packaged in a QFN5x6 surface-mount case with a thermal pad, measuring 5 mm by 6 mm. The device has a drain-source voltage rating of 30 V, continuous drain current of 170 A at 25°C, and a maximum power dissipation of 135 W. It features a maximum on-state resistance of 1.2 mΩ at V GS=10 V and I D=20 A, and an avalanche energy rating of 1350 mJ. The MOSFET is AEC-Q101 compliant when marked with suffix -Q, supports logic-level gate drive, and meets RoHS and REACH requirements. Maximum junction temperature is 150°C, and thermal resistance from junction to case is 0.93 K/W.