Diotec Semiconductor Single FETs, MOSFETs DI006N06PW-AQ

N-Channel Power MOSFET in a QFN2x2 package, rated for a drain-source voltage of 65 V and a continuous drain current of 6.0 A, with a maximum on-state resistance of 30 mΩ at 4.5 V gate voltage. It has a thermal resistance of 75 K/W mounted on a 645 mm² copper pad, a junction temperature range of -55°C to +150°C, and is AEC-Q101 qualified. The device has a low profile height, fast switching times, and a total gate charge of 10 nC.