DI110N04PQ is an N-channel Power MOSFET designed for DC/DC converters, power supplies, and synchronous rectifiers. It is packaged in a QFN5x6 (8-QFN) surface-mount case with a thermal pad, measuring 5.0 mm by 6.0 mm. The device has a drain-source voltage rating of 40 V and a continuous drain current of 110 A at 25°C case temperature. Its drain-source on-state resistance is ≤2.5 mΩ at 10 V gate-source voltage and 23 A drain current. The device supports a maximum junction temperature of 175°C and has a single-pulse avalanche energy rating of 123.5 mJ. It meets AEC-Q101 compliance and qualification standards, is RoHS compliant (excluding 7a-I), and certified to UL 94 V-0. Thermal resistance from junction to case is 2.7 K/W. The gate charge totals 48 nC at 10 V gate voltage. Packaging is taped and reeled with 5000 pieces per 13-inch reel, and the part has an MSL rating of 3.
Win Source Part Number: 1034395-DI110N04PQ
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 30
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-QFN (5x6)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2.98 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: Not Applicable
REACH Status: REACH info available upon request
HTSUS: 8541.21.0000
Mfr: Diotec Semiconductor
Other Names: 2796-DI110N04PQTR,27
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1034395-DI110N04PQ |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
