DIODES Incorporated FET, MOSFET Arrays ZXMN3A06DN8TA

MOSFET 2N-CH 30V 4.9A 8-SOIC

MOSFET 2N-CH 30V 4.9A 8SO Product overview: ZXMN3A06DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN3A06DN8TA can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.8W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 30V 4.9A 1.8W Surface Mount 8-SO

Manufacturer: Diodes Incorporated
Win Source Part Number: 036968-ZXMN3A06DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: ZXMN3A06DN8
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.9A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 17.5nC @ 10V
Max Input Capacitance: 796pF @ 25V
Maximum Rds On at Id,Vgs: 35 mOhm @ 9A, 10V
Alternative Parts (Cross-Reference): Si4824DY-T1-E3; Si4824DY; Si4824DY-E3; SI4824DY-T1;
Introduction Date: August 15, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance