DIODES Incorporated Mosfet, N Channel, 100V, 2.4A, Sot-223; Channel Type Diodes Inc. ZXMN10A11G

The ZXMN10A11G is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications, such as motor control and DC-DC converters, in a SOT223 package measuring 6.50mm x 3.50mm x 1.60mm. It has a drain-source voltage rating of 100V, a continuous drain current of 2.4A at 25°C, and on-state resistance of 350mΩ at VGS=10V and 450mΩ at VGS=6V. The device features a low input capacitance of 274pF and a pulsed drain current of 7.9A. It is RoHS compliant, halogen and antimony free, qualified to AEC-Q101 standards, and meets UL 94 V-0 flammability rating with moisture sensitivity level 1 per J-STD-020. Thermal resistance junction-to-ambient is 32.0°C/W.