DIODES Incorporated N Channel Mosfet, 100V, 800Ma, Sot-23; Channel Type Diodes Inc. ZXMN10A07F

Description
N CHANNEL MOSFET, 100V, 800mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:640mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
Description
N CHANNEL MOSFET, 100V, 800mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:640mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The ZXMN10A07F is a 100V N-channel enhancement mode MOSFET in an SOT23 package, designed for high-efficiency power management applications such as DC-DC converters and motor control. It has a maximum continuous drain current of 0.76A at VGS = 10V and 0.67A at VGS = 6V, with a drain-source on-resistance of 700mΩ at VGS = 10V and 900mΩ at VGS = 6V. The gate threshold voltage ranges from 2V to 4V. The device is RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards. It features a thermal resistance from junction to ambient of 155°C/W when mounted on an FR4 PCB with short pulse measurements. The package measures 2.90mm in height, 2.40mm in length, and 1.30mm in width, with a weight of approximately 0.008 grams. The device operates from -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

The ZXMN10A07F is a 100V N-channel enhancement mode MOSFET in an SOT23 package, designed for high-efficiency power management applications such as DC-DC converters and motor control. It has a maximum continuous drain current of 0.76A at VGS = 10V and 0.67A at VGS = 6V, with a drain-source on-resistance of 700mΩ at VGS = 10V and 900mΩ at VGS = 6V. The gate threshold voltage ranges from 2V to 4V. The device is RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards. It features a thermal resistance from junction to ambient of 155°C/W when mounted on an FR4 PCB with short pulse measurements. The package measures 2.90mm in height, 2.40mm in length, and 1.30mm in width, with a weight of approximately 0.008 grams. The device operates from -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
N Channel Mosfet, 100V, 800Ma, Sot-23; Channel Type Diodes Inc. - 98K4128 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 800Ma, Sot-23; Channel Type Diodes Inc.
98K4128
N Channel Mosfet, 100V, 800Ma, Sot-23; Channel Type Diodes Inc. 98K4128
N CHANNEL MOSFET, 100V, 800mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:640mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 800mA, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:640mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 98K4128
Product Name N Channel Mosfet, 100V, 800Ma, Sot-23; Channel Type Diodes Inc.
Polarity N-Channel
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