Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. It features logic-level compatibility, very fast switching, ESD protection up to 1.5 kV, and is AEC-Q101 qualified. The device has a drain-source voltage rating of 60 V, a continuous drain current of 320 mA per transistor at 25°C, and a drain-source on-state resistance of 1 Ω to 1.6 Ω at V_{GS} = 10 V and I_D = 320 mA. Total power dissipation is 445 mW per device under standard mounting conditions. Operating junction temperature ranges from -55°C to 150°C.
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Mosfet Array 2 N-Channel (Dual) 60V 320mA (Ta) 445mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA (Ta) 445mW Surface Mount 6-TSSOP
Mosfet Array 2 N-Channel (Dual) 60V 320mA (Ta) 445mW Surface Mount 6-TSSOP
MOSFET 2N-CH 60V 0.32A 6TSSOP
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSS138BKSH | 1727-7841-6-ND | BSS138BKSH | BSS138BKSH |
| Product Name | 60 V, 320 mA dual N-channel Trench MOSFET | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| MOSFET Operating Mode | Enhancement |
