MOSFET N/P-CH 60V 8-SOIC
Manufacturer: Diodes Incorporated
Win Source Part Number: 036933-ZXMC6A09DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.9A, 3.7A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 24.2nC @ 10V
Max Input Capacitance: 1407pF @ 40V
Maximum Rds On at Id,Vgs: 45 mOhm @ 8.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N/P-CH 60V 3.9A/3.7A 8SO Product overview: ZXMC6A09DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.9A, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.9A, 3.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMC6A09DN8TA can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 60V 3.9A, 3.7A 1.8W Surface Mount 8-SO
Mosfet Array N and P-Channel 60V 3.9A, 3.7A 1.8W Surface Mount 8-SO
Mosfet Array N and P-Channel 60V 3.9A, 3.7A 1.8W Surface Mount 8-SO
MOSFET, DUAL, N/P-CH, 60V, 5.1A ROHS COMPLIANT: YES
MOSFET N/P-CH 60V 3.9A/3.7A 8SO
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ZXMC6A09DN8TA | 036933-ZXMC6A09DN8TA | 289-ZXMC6A09DN8TA | ZXMC6A09DN8TADKR-ND | 29AK9148 | ZXMC6A09DN8TA | ZXMC6A09DN8TA |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMC6A09DN8TA | 60V 3.9A 3.7A MOSFET Transistor | FET, MOSFET Arrays | Mosfet, Dual, N/p-Ch, 60V, 5.1A Rohs Compliant Diodes Inc. | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 3900 milliamps | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
