DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A ZVP3306A

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120330-ZVP3306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 160mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 50pF @ 18V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A - 1120330-ZVP3306A - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - ZVP3306A-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - ZVP3306A - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVP3306A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. - 98K4112 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120330-ZVP3306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 160mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 50pF @ 18V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A - 1120330-ZVP3306A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A
1120330-ZVP3306A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A 1120330-ZVP3306A
Manufacturer: Diodes Incorporated Win Source Part Number: 1120330-ZVP3306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 160mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 50pF @ 18V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120330-ZVP3306A
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 160mA (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 50pF @ 18V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZVP3306A-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVP3306A-ND
Single FETs, MOSFETs ZVP3306A-ND
P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole TO-92

P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole TO-92

Buy Now Datasheet
Single FETs, MOSFETs - ZVP3306A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZVP3306A
Single FETs, MOSFETs ZVP3306A
MOSFET P-CH 60V 160MA TO92-3

MOSFET P-CH 60V 160MA TO92-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVP3306A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVP3306A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVP3306A
MOSFET P-CH 60V 160MA TO92-3

MOSFET P-CH 60V 160MA TO92-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
ZVP3306A
MOSFET ZVP3306A
MOSFET P-Chnl 60V

MOSFET P-Chnl 60V

Buy Now Datasheet
Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. - 98K4112 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc.
98K4112
Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. 98K4112
MOSFET, P CHANNEL, 60V, -160mA, E-LINE; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

MOSFET, P CHANNEL, 60V, -160mA, E-LINE; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1120330-ZVP3306A ZVP3306A-ND ZVP3306A ZVP3306A ZVP3306A 98K4112
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc.
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 60 volts 60 volts
PD 625 milliwatts 625 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data