DIODES Incorporated Single FETs, MOSFETs ZVP3306A

Description
MOSFET P-CH 60V 160MA TO92-3
  • Single FETs, MOSFETs - ZVP3306A - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - ZVP3306A-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A - 1120330-ZVP3306A - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVP3306A - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. - 98K4112 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
MOSFET P-CH 60V 160MA TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZVP3306A - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZVP3306A
Single FETs, MOSFETs ZVP3306A
MOSFET P-CH 60V 160MA TO92-3

MOSFET P-CH 60V 160MA TO92-3

Supplier's Site Datasheet
Single FETs, MOSFETs - ZVP3306A-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZVP3306A-ND
Single FETs, MOSFETs ZVP3306A-ND
P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole TO-92

P-Channel 60V 160mA (Ta) 625mW (Ta) Through Hole TO-92

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A - 1120330-ZVP3306A - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A
1120330-ZVP3306A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A 1120330-ZVP3306A
Manufacturer: Diodes Incorporated Win Source Part Number: 1120330-ZVP3306A Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 160mA (Ta) Gate-Source Threshold Voltage: 3.5V @ 1mA Max Input Capacitance: 50pF @ 18V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 Ohm @ 200mA, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120330-ZVP3306A
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 160mA (Ta)
Gate-Source Threshold Voltage: 3.5V @ 1mA
Max Input Capacitance: 50pF @ 18V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 Ohm @ 200mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZVP3306A - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZVP3306A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZVP3306A
MOSFET P-CH 60V 160MA TO92-3

MOSFET P-CH 60V 160MA TO92-3

Supplier's Site
Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. - 98K4112 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc.
98K4112
Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. 98K4112
MOSFET, P CHANNEL, 60V, -160mA, E-LINE; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

MOSFET, P CHANNEL, 60V, -160mA, E-LINE; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
ZVP3306A
MOSFET ZVP3306A
MOSFET P-Chnl 60V

MOSFET P-Chnl 60V

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number ZVP3306A ZVP3306A-ND 1120330-ZVP3306A ZVP3306A 98K4112 ZVP3306A
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZVP3306A Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, 60V, -160Ma, E-Line; Channel Type Diodes Inc. MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 160 milliamps 160 milliamps
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