Manufacturer: Diodes Incorporated
Win Source Part Number: 1283320-ZVN3310A
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com/
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 625mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 200mA
Rds On (Maximum) at Id, Vgs: 10Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 40pF at 25V
MOSFET N-CH 100V 200MA TO92-3
N-Channel 100V 200mA (Ta) 625mW (Ta) Through Hole TO-92
MOSFET N-CH 100V 200MA TO92-3 Product overview: ZVN3310A from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZVN3310A can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 200MA TO92-3
100V 200mA 10Ω@500mA,10V 625mW 2.4V@1mA null TO-92-3 MOSFETs ROHS
N CHANNEL MOSFET, 100V, 200mA TO-92; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1283320-ZVN3310A | ZVN3310A | ZVN3310A-ND | 278-ZVN3310A | ZVN3310A | ZVN3310A | 98K4102 | ZVN3310A |
| Product Name | FETs - Single - ZVN3310A | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 200MA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | N Channel Mosfet, 100V, 200Ma To-92; Channel Type Diodes Inc. | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 625 milliwatts | 625 milliwatts | 625 milliwatts | 625 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
