DIODES Incorporated Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs SDM4A40EP3-7B

Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Part Status: Obsolete Technology: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Speed: 200MHz Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 250pF @ 10V, 1MHz Package / Case: 8-SMD, No Lead Mounting Type: Board Edge; Panel Mount; Through Hole Operating Temperature - Junction: -55°C ~ 100°C
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Description
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Part Status: Obsolete Technology: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Speed: 200MHz Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 250pF @ 10V, 1MHz Package / Case: 8-SMD, No Lead Mounting Type: Board Edge; Panel Mount; Through Hole Operating Temperature - Junction: -55°C ~ 100°C
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Datasheet
Datasheet Summary
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The SDM4A40EP3-7B is a 40V, 4A Schottky barrier rectifier in an X3-TSN1608-2 surface mount package, occupying 1.28mm² of board space. It features a maximum forward voltage drop of 610mV at 4.0A and a maximum reverse leakage current of 150µA at 40V. The device operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 60°C/W junction-to-ambient when mounted on a 1-inch square copper pad. It is RoHS compliant, halogen- and antimony-free, and qualified for automotive applications per AEC-Q200. Moisture sensitivity is Level 1 per J-STD-020, with terminals compatible with MIL-STD-202, Method 208 e4.

Datasheet Summary
Powered by GS/AI

The SDM4A40EP3-7B is a 40V, 4A Schottky barrier rectifier in an X3-TSN1608-2 surface mount package, occupying 1.28mm² of board space. It features a maximum forward voltage drop of 610mV at 4.0A and a maximum reverse leakage current of 150µA at 40V. The device operates over a junction temperature range of -55°C to +150°C, with a thermal resistance of 60°C/W junction-to-ambient when mounted on a 1-inch square copper pad. It is RoHS compliant, halogen- and antimony-free, and qualified for automotive applications per AEC-Q200. Moisture sensitivity is Level 1 per J-STD-020, with terminals compatible with MIL-STD-202, Method 208 e4.

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Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Part Status: Obsolete Technology: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V Speed: 200MHz Current - Reverse Leakage @ Vr: 1 mA @ 60 V Capacitance @ Vr, F: 250pF @ 10V, 1MHz Package / Case: 8-SMD, No Lead Mounting Type: Board Edge; Panel Mount; Through Hole Operating Temperature - Junction: -55°C ~ 100°C

Manufacturer: AMIS
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Part Status: Obsolete
Technology: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Speed: 200MHz
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Capacitance @ Vr, F: 250pF @ 10V, 1MHz
Package / Case: 8-SMD, No Lead
Mounting Type: Board Edge; Panel Mount; Through Hole
Operating Temperature - Junction: -55°C ~ 100°C

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package Type SOT3
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