DIODES Incorporated TRANSISTORS - Transistors (BJT) - Single - DVRN6056-7-F DVRN6056-7-F

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080846-DVRN6056-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 750mV @ 50mA, 500mA Typical Gain (hFE) (Min): 100 @ 150mA, 1V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 080846-DVRN6056-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 750mV @ 50mA, 500mA Typical Gain (hFE) (Min): 100 @ 150mA, 1V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - DVRN6056-7-F - 080846-DVRN6056-7-F - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - DVRN6056-7-F
080846-DVRN6056-7-F
TRANSISTORS - Transistors (BJT) - Single - DVRN6056-7-F 080846-DVRN6056-7-F
Manufacturer: Diodes Incorporated Win Source Part Number: 080846-DVRN6056-7-F Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 750mV @ 50mA, 500mA Typical Gain (hFE) (Min): 100 @ 150mA, 1V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 080846-DVRN6056-7-F
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: NPN + Zener Diode (Isolated)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min): 100 @ 150mA, 1V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
40V 0.6A Bipolar Transistor
276-DVRN6056-7-F
40V 0.6A Bipolar Transistor 276-DVRN6056-7-F
TRANS NPN 40V 0.6A SOT26 Product overview: DVRN6056-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.6A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.6A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DVRN6056-7-F can be used for catalog matching and distributor lookup.

TRANS NPN 40V 0.6A SOT26 Product overview: DVRN6056-7-F from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.6A. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.6A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-DVRN6056-7-F can be used for catalog matching and distributor lookup.

Supplier's Site
Single Bipolar Transistors - DVRN6056-7-F - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
DVRN6056-7-F
Single Bipolar Transistors DVRN6056-7-F
TRANS NPN 40V 0.6A SOT26

TRANS NPN 40V 0.6A SOT26

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DVRN6056-7-F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DVRN6056-7-F
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DVRN6056-7-F
TRANS NPN 40V 0.6A SOT26

TRANS NPN 40V 0.6A SOT26

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 080846-DVRN6056-7-F 276-DVRN6056-7-F DVRN6056-7-F DVRN6056-7-F
Product Name TRANSISTORS - Transistors (BJT) - Single - DVRN6056-7-F 40V 0.6A Bipolar Transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN + Zener Diode (Isolated) NPN + Zener Diode (Isolated); NPN
Package Type SOT3; SOT26; SOT-26 Tape & Reel (TR) SOT23; SOT26; SOT-23-6 SOT26; SOT-26
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
VCEO 40 volts 40 volts 40 volts
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