DIODES Incorporated FET, MOSFET Arrays DMTH6010LPDW-13

Description
MOSFET 2N-CH 60V 13.1A PWRDI50
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Description
MOSFET 2N-CH 60V 13.1A PWRDI50
Request a Quote
Datasheet
Datasheet Summary
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DMTH6010LPDW-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, designed for high-efficiency power management applications with a 60V drain-source voltage rating and a maximum continuous drain current of 13.1A at TA=75°C. It features an on-state resistance of 11mΩ at VGS=10V and 16mΩ at VGS=4.5V, with a junction operating temperature range of -55°C to +175°C. The device meets UL 94 V-0 flammability standards, is lead-free and RoHS compliant, and has a moisture sensitivity level of 1 per J-STD-020. It supports 100% unclamped inductive switching testing and includes wettable flanks for improved optical inspection. The packaging is tape and reel, 2,500 per carrier.

Datasheet Summary
Powered by GS/AI

DMTH6010LPDW-13 is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, designed for high-efficiency power management applications with a 60V drain-source voltage rating and a maximum continuous drain current of 13.1A at TA=75°C. It features an on-state resistance of 11mΩ at VGS=10V and 16mΩ at VGS=4.5V, with a junction operating temperature range of -55°C to +175°C. The device meets UL 94 V-0 flammability standards, is lead-free and RoHS compliant, and has a moisture sensitivity level of 1 per J-STD-020. It supports 100% unclamped inductive switching testing and includes wettable flanks for improved optical inspection. The packaging is tape and reel, 2,500 per carrier.

Suppliers

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Supplier Links
FET, MOSFET Arrays - 31-DMTH6010LPDW-13TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
31-DMTH6010LPDW-13TR-ND
FET, MOSFET Arrays 31-DMTH6010LPDW-13TR-ND
MOSFET 2N-CH 60V 13.1A PWRDI50

MOSFET 2N-CH 60V 13.1A PWRDI50

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 31-DMTH6010LPDW-13TR-ND
Product Name FET, MOSFET Arrays
Package Type 8-PowerTDFN
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