Manufacturer: Diodes Incorporated
Win Source Part Number: 800895-DMTH6010LPD-1
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.8W
Supplier Device Package: PowerDI5060-8
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerTDFN
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 11mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 40.2nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2615pF at 30V
Current - Continuous Drain (Id) at 25°C: 13.1A , 47.6A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
MOSFET 2N-CH 60V 13.1A PWRDI50 Product overview: DMTH6010LPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 13.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH6010LPD-13 can be used for catalog matching and distributor lookup.
MOSFET 2N-CHA 60V 13.1A POWERDI
Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
MOSFET 2N-CHA 60V 13.1A POWERDI
MOSFET 2N-CH 60V 13.1A PWRDI50
DUAL MOSFET, N-CH/60V/47.6A/POWER
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 800895-DMTH6010LPD-13 | 289-DMTH6010LPD-13 | DMTH6010LPD-13 | DMTH6010LPD-13DITR-ND | 233-DMTH6010LPD-13 | DMTH6010LPD-13 | 81AH8909 | DMTH6010LPD-13 |
| Product Name | FETs - Arrays - DMTH6010LPD-13 | 60V 13.1A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET 2N-CHA 60V 13.1A POWERDI | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, N-Ch/60V/47.6A/powerdi 5060 Rohs Compliant Diodes Inc. | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3 | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | Automotive | TO-3 | ||
| Packing Method | Tape Reel; Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |