MOSFET 2N-CHA 60V 13.1A POWERDI
Manufacturer: Diodes Incorporated
Win Source Part Number: 800895-DMTH6010LPD-1
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.8W
Supplier Device Package: PowerDI5060-8
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: 8-PowerTDFN
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 11mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 40.2nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2615pF at 30V
Current - Continuous Drain (Id) at 25°C: 13.1A , 47.6A (Tc)
Vgs(th) (Maximum) at Id: 3V at 250μA
MOSFET 2N-CH 60V 13.1A PWRDI50 Product overview: DMTH6010LPD-13 from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 13.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 13.1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-DMTH6010LPD-13 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
Mosfet Array 2 N-Channel (Dual) 60V 13.1A (Ta), 47.6A (Tc) 2.8W Surface Mount PowerDI5060-8
DUAL MOSFET, N-CH/60V/47.6A/POWER
MOSFET 2N-CHA 60V 13.1A POWERDI
MOSFET 2N-CH 60V 13.1A PWRDI50
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | DMTH6010LPD-13 | 800895-DMTH6010LPD-13 | 289-DMTH6010LPD-13 | DMTH6010LPD-13DITR-ND | DMTH6010LPD-13 | 81AH8909 | 233-DMTH6010LPD-13 | DMTH6010LPD-13 |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - DMTH6010LPD-13 | 60V 13.1A MOSFET Transistor | FET, MOSFET Arrays | MOSFET | Dual Mosfet, N-Ch/60V/47.6A/powerdi 5060 Rohs Compliant Diodes Inc. | MOSFET 2N-CHA 60V 13.1A POWERDI | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 13100 milliamps | |||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
