DIODES Incorporated FET, MOSFET Arrays DMTH10H018LPDW-13

The DMTH10H018LPDW is a dual N-channel enhancement mode MOSFET in a PowerDI5060-8 package, designed for high-efficiency power management in automotive and DC-DC converter applications. It features a 100V drain-source voltage rating, with on-resistance of 17.4mΩ at VGS=10V and 30.3mΩ at VGS=4.5V, and continuous drain current of 36.8A at TC=25°C. The device supports operation up to 175°C junction temperature, has a thermal resistance of 3.07°C/W from junction to case, and is rated for 100% unclamped inductive switching. It meets AEC-Q100/101/104/200 qualifications, is RoHS compliant, and is manufactured in IATF 16949 certified facilities. The package is molded plastic with UL 94 V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.