DIODES Incorporated FET, MOSFET Arrays DMT8020LDGQ-7

The DMT8020LDGQ-7 is a symmetric dual N-channel MOSFET in a PowerDI3333-8 package, designed for high-efficiency power-management applications. It features an 80V drain-source breakdown voltage, with a maximum on-resistance of 20mΩ at VGS = 10V and 30mΩ at VGS = 4.5V. The device supports continuous drain currents of 6.7A and 5.8A under these conditions, and is qualified to AEC-Q101 for automotive use. It meets UL 94 V-0 flammability standards, is RoHS compliant, and has a thermal resistance of 70°C/W when mounted on an FR-4 board with 2oz copper and thermal bias. The package measures 3.30mm x 3.30mm with a height of 0.80mm. Moisture sensitivity is Level 1 per J-STD-020.