DIODES Incorporated Single FETs, MOSFETs DMT35M4LSSQ-13

The DMT35M4LSSQ-13 is a 30V N-channel enhancement mode MOSFET in an SO-8 package, designed for automotive DC-DC converters and power management applications. It features a drain-source on-resistance of 6mΩ at VGS = 10V and 10.1mΩ at VGS = 4.5V, with continuous drain currents of 38A at TC = +25°C and 29A at TA = +25°C. The device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. It meets UL 94 V-0 flammability standards, is RoHS compliant, and includes 100% UIS testing for robustness. The thermally efficient SO-8 package has dimensions of 4.90mm x 6.00mm, with a weight of approximately 0.074 grams. The part is supplied in tape and reel packaging with 2,500 units per reel.