DIODES Incorporated Single FETs, MOSFETs DMT34M8LFDE-13

DMT34M8LFDE-13 is a 30V N-channel enhancement mode MOSFET in a U-DFN2020-6 package, designed for high-efficiency power-management applications. It has a continuous drain current of 19A at 25°C and 15A at 70°C with a gate-source voltage of 10V, and an on-resistance of 4mΩ at VGS=10V and 7.25mΩ at VGS=4.5V. The device is RoHS compliant, halogen and antimony free, and meets UL 94 V-0 flammability standards. It is qualified to AEC-Q100/101/104/200 and manufactured in IATF 16949 certified facilities. The package measures 2.0mm x 2.0mm with a 0.65mm pitch and is supplied in 10,000-piece tape and reel packaging. Thermal resistance junction-to-ambient is 55°C/W when mounted on a 1-inch square copper pad. Operating temperature range is -55°C to +150°C.